Artificial Synapses Based on in-Plane Gate Organic Electrochemical Transistors

Chuan Qian1, Jia Sun1, Ling-An Kong1

  • 1Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University , Changsha, Hunan 410083, P. R. China.

Summary

Researchers simulated artificial synapses using ion-gel gated organic field-effect transistors (FETs) with poly(3-hexylthiophene) (P3HT) channels. This study mimics key synaptic behaviors, advancing neuromorphic engineering with flexible organic synaptic devices.

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