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Published on: October 13, 2017
Normal Incident Long Wave Infrared Quantum Dash Quantum Cascade Photodetector
Feng-Jiao Wang1, Fei Ren1, Shu-Man Liu2
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
We developed a quantum dash quantum cascade photodetector (QDash-QCD) with sensitive photoresponse at 10 μm. This device shows promising high-temperature operation, maintaining stable responsivity up to 190 K.
Area of Science:
- Optoelectronics
- Quantum Engineering
- Materials Science
Background:
- Quantum cascade photodetectors (QCDs) are crucial for infrared detection.
- Achieving high-temperature operation in QCDs remains a significant challenge.
- InAs quantum dashes offer unique electronic properties for optoelectronic devices.
Purpose of the Study:
- To demonstrate a novel quantum dash quantum cascade photodetector (QDash-QCD).
- To investigate the photoresponse characteristics of the QDash-QCD at 10 μm.
- To evaluate the operational temperature range and responsivity of the device.
Main Methods:
- Incorporation of self-assembled InAs quantum dashes into the active region of a long-wave infrared QCD.
- Fabrication of a hybrid quantum well/quantum dash (QW/QDash) absorption region using Stranski-Krastanow mode growth.
- Formation of stair-like quantum levels using a lattice-matched InGaAs/InAlAs superlattice.
Main Results:
- Sensitive photoresponse to normal incident light at 10 μm was observed.
- Photoresponse is attributed to intersubband (ISB) transitions and electron transfer on LO-phonon-separated levels.
- Stable responsivity was achieved from 5 mA/W at 77 K to 3 mA/W at 190 K.
Conclusions:
- The QDash-QCD exhibits effective detection of long-wave infrared light.
- The device demonstrates potential for high-temperature infrared detection applications.
- The hybrid QW/QDash active region design is effective for enhanced photodetector performance.
