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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Novel Organic Schottky Barrier Diode Created in a Single Planar Polymer Film
Hong Wang1, Jui-Hung Hsu2, Gang Yang1
1Department of Mechanical Engineering, Texas A&M University, College Station, TX, 77843, USA.
Abstract:
An organic Schottky barrier diode is created in a single planar PEDOT:Tos film by treating a half of the PEDOT:Tos film with TDAE vapor. Current is rectified in one direction by the Schottky barrier at the junction. The unique planar structure made of a single film greatly reduces defects, resulting in a remarkably high current density with a high rectification ratio, as well as making it suitable for ink-jet-type or roll-to-roll printing techniques.
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