Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Mar 15, 2026

Fabrication and Testing of Photonic Thermometers
08:44

Fabrication and Testing of Photonic Thermometers

Published on: October 24, 2018

6.3K

Optical thermometry based on level anticrossing in silicon carbide.

A N Anisimov1, D Simin2, V A Soltamov1

  • 1Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia.

Scientific Reports
|September 15, 2016
PubMed
Summary

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Raman scattering spectroscopy of MBE grown thin film topological insulator Bi<sub>2-</sub>Sb<sub></sub>Te<sub>3-</sub>Se<sub></sub>.

Physical chemistry chemical physics : PCCP·2024
Same author

[Experimental study of the effectiveness of terbinafine in the treatment of fungal keratitis].

Vestnik oftalmologii·2023
Same author

Super-resolution THz endoscope based on a hollow-core sapphire waveguide and a solid immersion lens.

Optics express·2023
Same author

Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity-Enhanced Emission.

Nano letters·2022
Same author

The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap.

Nature communications·2022
Same author

Prospects for the use of graphene-based biological sensors in the early diagnosis of Alzheimer's disease (review of literature).

Klinicheskaia laboratornaia diagnostika·2022

We discovered a large temperature shift in silicon carbide's silicon vacancy centers, enabling a new all-optical thermometer. This breakthrough allows for precise temperature sensing in tiny volumes.

Area of Science:

  • Quantum Optics
  • Materials Science
  • Solid-State Physics

Background:

  • Silicon vacancy centers in 4H silicon carbide are promising for quantum applications.
  • Understanding their excited-state properties is crucial for device development.
  • Temperature sensitivity of quantum defects is a key parameter for sensing applications.

Purpose of the Study:

  • To investigate the thermal shift of the excited-state zero-field splitting in silicon vacancy centers.
  • To develop an all-optical thermometry technique based on these centers.
  • To explore the potential for integrated magnetic field and temperature sensing.

Main Methods:

  • Optically detected magnetic resonance (ODMR) in the excited state was used, with the ground state as an ancilla.

More Related Videos

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
09:03

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

7.7K
In Situ Surface Temperature Measurement in a Conveyor Belt Furnace via Inline Infrared Thermography
07:03

In Situ Surface Temperature Measurement in a Conveyor Belt Furnace via Inline Infrared Thermography

Published on: May 30, 2020

4.9K

Related Experiment Videos

Last Updated: Mar 15, 2026

Fabrication and Testing of Photonic Thermometers
08:44

Fabrication and Testing of Photonic Thermometers

Published on: October 24, 2018

6.3K
A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
09:03

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

7.7K
In Situ Surface Temperature Measurement in a Conveyor Belt Furnace via Inline Infrared Thermography
07:03

In Situ Surface Temperature Measurement in a Conveyor Belt Furnace via Inline Infrared Thermography

Published on: May 30, 2020

4.9K
  • Photoluminescence intensity monitoring near level anticrossing was employed for temperature detection without radiofrequency fields.
  • Characterization of the zero-field splitting in both ground and excited states was performed.

    • Main Results:

    • A giant thermal shift of 2.1 MHz/K was observed in the excited-state zero-field splitting.
    • An all-optical thermometry technique with a sensitivity of 100 mK/Hz(1/2) was demonstrated for a 10^-6 mm^3 volume.
    • No detectable temperature shift was found for the ground-state zero-field splitting.

    Conclusions:

    • The excited-state zero-field splitting of silicon vacancy centers exhibits significant temperature dependence, suitable for thermometry.
    • An all-optical, highly sensitive thermometry technique is feasible using these centers.
    • Integrated magnetic field and temperature sensing on the same center is a potential future application.