Electrical Transport Properties of Au Nanoparticles and Thin Films on Ge Probed Using a Conducting Atomic Force
Erjuan Guo1, Zhigang Zeng1, Xiaobo Shi1
1Department of Physics, College of Sciences, ‡Institute of NanoMicroEnergy, College of Science, §Shanghai Key Laboratory of High Temperature Superconductor, ∥Department of Chemistry, College of Sciences, Shanghai University , Shanghai 200444, China.
Abstract:
In this work, gold nanoparticles (Au NPs) were distributed on an n-Ge substrate using the colloidal NP deposition method to form Au NP/Ge Schottky diodes (SDs), and the current transport properties of these nano-SDs were studied. The current density-voltage (J-V) characteristics were measured on each nanometer-sized Au particle using a conducting atomic force microscope (C-AFM). These Au NP/Ge diodes showed a rectifying behavior. According to the thermionic emission (TE) model, the effective Schottky barrier height (SBH) and ideality factors n were obtained. The SBH for the Au NP/Ge diodes ranges from 0.22 to 0.30 eV and the ideality factor ranges from 3.8 to 8.6. The current density and the barrier height increase while the ideality factor decreases with increasing Au NP diameters. This indicates that the tunneling effect is enhanced because of the narrowed depletion width and decreased size of the Au NP/Ge SDs. To compare the electrical behavior with Au NP/Ge diodes, the Au thin film/Ge diodes were also prepared and their SBHs were much larger because of the image-charge lowering effect and the tunneling effect in Au NP/Ge diodes.
