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Updated: Mar 14, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Electrically controllable sudden reversals in spin and valley polarization in silicene
Qingtian Zhang1, K S Chan2,3, Jingbo Li1
1School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong 510006, People's Republic of China.
Abstract:
We study the spin and valley dependent transport in a silicene superlattice under the influence of a magnetic exchange field, a perpendicular electric field and a voltage potential. It is found that a gate-voltage-controllable fully spin and valley polarized current can be obtained in the proposed device, and the spin and valley polarizations are sensitive oscillatory functions of the voltage potential. In properly designed superlattice structure, the spin and valley polarizations can be reversed from -100% to 100% by a slight change in the external voltage potential. The energy dispersion relations of the superlattice structure are also investigated, which helps us to understand the effects of the superlattice structure. The switching of the spin direction and the valley of the tunneling electrons by a gate voltage enables new possibilities for spin or valley control in silicene-based spintronics and valleytronics.
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