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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
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Seed layer technique for high quality epitaxial manganite films
P Graziosi, A Gambardella1, M Calbucci1
1CNR - ISMN, Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati , v. Gobetti 101, 40129 Bologna, Italy.
AIP Advances
|September 21, 2016
Summary
Interface engineering enables simultaneous control over manganite thin film growth and magnetic properties. This approach optimizes epitaxy and ferromagnetic characteristics for advanced materials applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Thin Film Technology
Background:
- Manganite thin films exhibit unique magnetotransport properties crucial for electronic devices.
- Controlling both growth mode and magnetic characteristics simultaneously presents a significant challenge.
Purpose of the Study:
- To introduce an innovative method for simultaneous control of growth mode and magnetotransport properties in manganite thin films.
- To achieve persistent two-dimensional epitaxy and robust ferromagnetic properties through interface engineering.
Main Methods:
- Utilizing film/substrate interface engineering via a manganite seed layer.
- Optimizing substrate temperature during deposition.
- Performing structural measurements to correlate properties with epitaxy.
Main Results:
- Demonstrated simultaneous control over growth mode and magnetotransport properties.
- Achieved persistent bi-dimensional epitaxy and robust ferromagnetic characteristics.
- Identified improved epitaxy as key to optimal film properties.
Conclusions:
- Interface engineering provides an effective strategy for tailoring manganite thin film properties.
- A new growth scenario, shifting from heteroepitaxy to pseudo-homoepitaxy, is proposed.
- Key growth parameters like formation energy and strain profile were derived.
