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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Seed layer technique for high quality epitaxial manganite films
P Graziosi, A Gambardella1, M Calbucci1
1CNR - ISMN, Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati , v. Gobetti 101, 40129 Bologna, Italy.
Abstract:
We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

