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Updated: Mar 14, 2026
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Band Alignment for Rectification and Tunneling Effects in Al2O3 Atomic-Layer-Deposited on Back Contact for CdTe Solar
Yantao Su1, Chao Xin1, Yancong Feng1
1School of Advanced Materials, Peking University, Peking University Shenzhen Graduate School , Shenzhen 518055, China.
Abstract:
The present work intends to explain why ultrathin Al2O3 atomic-layer-deposited (ALD) on the back contact with rectification and tunneling effects can significantly improve the performance of CdTe solar cells in our previous work [ Liang , J. ; et al. Appl. Phys. Lett. 2015 , 107 , 013907 ]. Herein, we further study the mechanism through establishing the interfacial energy band diagram configuration of the ALD Al2O3/CuxTe by experiment of X-ray photoelectron spectroscopy and first-principles calculations and conclude to find the band alignment with optimized layer thickness (about 1 nm ALD Al2O3) as the key factor for rectification and tunneling effects.
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