Optical and transport properties correlation driven by amorphous/crystalline disorder in InP nanowires

Area of Science:

• Materials Science
• Nanotechnology
• Solid State Physics

Background:

• Indium phosphide (InP) nanowires are promising for electronic and optoelectronic applications.
• Controlling the structure and properties of InP nanowires is crucial for device performance.
• Previous synthesis routes often involved hazardous precursors.

Purpose of the Study:

• To develop a reliable and safe synthesis route for indium phosphide nanowires.
• To investigate the structural, electronic, and optical properties of InP nanowires with crystalline/amorphous core-shell structures.
• To understand the influence of structural disorder on carrier transport and exciton recombination.

Main Methods:

• Synthesis of InP nanowires using a reliable, non-hazardous precursor route.
• Characterization using Raman spectroscopy to study phonon behavior.
• Analysis of electrical transport properties, including variable range hopping.
• Photoluminescence (PL) spectroscopy to investigate exciton recombination dynamics.

Main Results:

• Successfully grown InP nanowires with single crystalline zinc-blend cores and polycrystalline/amorphous shells.
• Raman spectra indicated phonon localization within 3 nm regions, correlating with shell grain sizes.
• Variable range hopping was identified as the dominant charge transport mechanism, suggesting 3D behavior.
• Photoluminescence spectra showed V-shape features, confirming significant potential fluctuations affecting exciton recombination.

Conclusions:

• The developed synthesis route provides InP nanowires with controlled core-shell structures.
• Phonon localization and carrier behavior are strongly influenced by the disordered shell.
• Potential fluctuations in the nanowires significantly impact exciton optical recombination across various conditions.