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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Temperature-dependent photoluminescence emission and Raman scattering from Mo1-x W x S2 monolayers
Yanfeng Chen1, Wen Wen1,2, Yiming Zhu1
1CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
Abstract:
2D transition metal dichalcogenide (TMD) alloys with tunable band gaps have recently gained wide interest due to their potential applications in future nanoelectronics and optoelectronics. Here, we report the temperature-dependent photoluminescence (PL) and Raman spectra of Mo1-x W x S2 monolayers with W composition x = 0, 0.29, 0.53, 0.66 and 1 in the temperature range 93-493 K. We observed a linear temperature dependence of PL emission energy and Raman frequency. The PL intensity is enhanced at high temperature (>393 K). The temperature coefficients are negative for both PL and Raman bands, which may result from anharmonicity, thermal expansion and composition disorder.
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