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Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor

Jeong-Gyu Song1, Seok Jin Kim1, Whang Je Woo1

  • 1School of Electrical and Electronics Engineering, Yonsei University , 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.

ACS Applied Materials & Interfaces
|September 30, 2016
PubMed

Keywords:
atomic layer depositionfield-effect transistormolybdenum disulfidetransition-metal dichalcogenidestwo-dimensional materials

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