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Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency

Wei Bao1, Zhicheng Su1, Changcheng Zheng2,1

  • 1Department of Physics, Shenzhen Institute of Research and Innovation (SIRI), and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong, Pokfulam Road, Hong Kong, China.

Scientific Reports
|October 1, 2016
PubMed

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