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Updated: Mar 13, 2026
Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films
Sahar Saremi1, Ruijuan Xu1, Liv R Dedon1
1Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.
Abstract:
A novel approach to on-demand improvement of electronic properties in complex-oxide ferroelectrics is demonstrated whereby ion bombardment - commonly used in classic semiconductor materials - is applied to the PbTiO3 system. The result is deterministic reduction in leakage currents by 5 orders of magnitude, improved ferroelectric switching, and unprecedented insights into the nature of defects and intergap state evolution in these materials.
