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Published on: November 11, 2013
Ring-shaped Racetrack memory based on spin orbit torque driven chiral domain wall motions
Yue Zhang1,2, Xueying Zhang1,2,3, Jingtong Hu4
1Fert Beijing Institute, Beihang University, Beijing, China.
Ring-shaped racetrack memory using spin orbit torque (SOT) overcomes data overflow issues inherent in traditional designs. This novel approach enables efficient, reliable data storage and retrieval for advanced memory applications.
Area of Science:
- Spintronics
- Materials Science
- Computer Engineering
Background:
- Racetrack memory (RM) offers potential for low-power, high-density, high-speed data storage.
- Conventional stripe-shaped RM faces data overflow and reliability issues due to bidirectional domain wall (DW) shifting.
- Geometric constraints in stripe RM increase circuit complexity and programming challenges.
Purpose of the Study:
- To propose and investigate a novel ring-shaped racetrack memory (RM) architecture.
- To address the data overflow and reliability limitations of conventional stripe-shaped RM.
- To explore the application of spin orbit torque (SOT) driven chiral DW motions in RM.
Main Methods:
- Utilized micromagnetic simulations to validate the functionality of ring-shaped RM.
- Investigated spin orbit torque (SOT) driven chiral domain wall (DW) motions.
- Modeled current flow through a heavy metal layer for DW shifting.
Main Results:
- Ring-shaped RM successfully demonstrates functionality and performance advantages over stripe designs.
- The 'end to end' circulation of storage data is achieved by current flowing through the heavy metal.
- All data remains within the device during shifting, preventing data loss.
Conclusions:
- Ring-shaped RM based on SOT-driven chiral DW motion effectively resolves data overflow issues.
- The proposed architecture enhances data integrity and reliability in memory devices.
- This work presents a promising pathway for practical memory and logic applications of RM.
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