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Updated: Mar 13, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks
Yoichi Tanabe1, Yoshikazu Ito2, Katsuaki Sugawara2
1Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan.
Abstract:
Nanoporous graphene- based electric-double-layer transistors (EDLTs) are successfully fabricated. Transport measurements of the EDLTs demonstrate that the ambipolar electronic states of massless Dirac fermions with a high carrier mobility are well preserved in 3D nanoporous graphene along with anomalous nonlinear Hall resistance and exceptional transistor on/off ratio. This study may open a new avenue for device applications of graphene.
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