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Updated: Mar 13, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots
Guodong Wang1,2, Baolai Liang1, Bor-Chau Juang3
1California NanoSystems Institute, University of California-Los Angeles, Los Angeles, CA 90095, USA.
Abstract:
The optical properties of In0.3Ga0.7As/GaAs surface quantum dots (SQDs) and buried QDs (BQDs) are investigated by photoluminescence (PL) measurements. The integrated PL intensity, linewidth, and lifetime of SQDs are significantly different from the BQDs both at room temperature and at low temperature. The differences in PL response, measured at both steady state and in transient, are attributed to carrier transfer between the surface states and the SQDs.
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