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KOH post-etching-induced rough silicon nanowire array for H2 gas sensing application.

Yuxiang Qin1, Yongyao Wang, Yi Liu

  • 1School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, People's Republic of China. Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin 300072, People's Republic of China. Key Laboratory for Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin 300072, People's Republic of China.

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|October 26, 2016
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Summary

A two-step etching process created rough silicon nanowire (SiNW) arrays with high surface area for improved hydrogen (H2) gas sensing. This method enhances gas diffusion and adsorption, leading to better sensitivity and faster response times at room temperature.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemical Engineering

Background:

  • Silicon nanowires (SiNWs) fabricated by one-step MACE have limited surface area and density, hindering gas diffusion and adsorption for sensing applications.
  • Achieving optimal gas sensitivity and response-recovery requires a SiNW structure with high surface area and loose configuration.

Purpose of the Study:

  • To develop a two-step etching process for fabricating aligned, rough SiNW arrays with enhanced surface area.
  • To investigate the effect of KOH post-etching time on SiNW morphology and H2-sensing properties at room temperature.

Main Methods:

  • Fabrication of smooth SiNW arrays using one-step metal-assisted chemical etching (MACE).
  • Post-etching treatment with KOH solution to roughen the SiNW surface and modify array density.
  • Systematic evaluation of H2-sensing properties (sensitivity, selectivity, response-recovery) of the rough SiNW array sensor at room temperature.

Main Results:

  • The two-step etching process effectively roughened the SiNW surface, increasing active surface area and creating a looser array configuration.
  • KOH post-etching decreased wire diameter and array density, optimizing the structure for gas sensing.
  • The rough SiNW array sensor demonstrated a linear response to H2 across a wide concentration range (50-10,000 ppm) at room temperature, with good stability and selectivity.
  • Over-etching by KOH led to decreased surface roughness and a subsequent reduction in H2-sensing performance.

Conclusions:

  • A two-step etching method, combining MACE and KOH post-etching, successfully produced rough SiNW arrays suitable for high-performance gas sensing.
  • The optimized rough SiNW array structure significantly enhances H2 diffusion and adsorption, leading to improved gas-sensing characteristics at room temperature.
  • Careful control of KOH etching time is crucial to avoid over-etching and maintain optimal H2-sensing performance.