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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic
Cheng-Yin Wang1, Canek Fuentes-Hernandez1, Minseong Yun1
1Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, and ‡Center for Organic Photonics and Electronics (COPE), Woodruff School of Mechanical Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.
Abstract:
We report on top-gate OFETs with a bilayer gate dielectric comprising an Al2O3 /HfO2 nanolaminate layer grown by atomic layer deposition and an amorphous fluoro-polymer layer (CYTOP). Top-gate OFETs display average carrier mobility values of 0.9 ± 0.2 cm2/(V s) and threshold voltage values of -1.9 ± 0.5 V and high operational and environmental stability under different environmental conditions such as damp air at 50 °C (80% relative humidity) and prolonged immersion in water at a temperature up to 95 °C.
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