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Phase-Field-Crystal Model for Electromigration in Metal Interconnects.

Nan Wang1, Kirk H Bevan2, Nikolas Provatas1

  • 1Department of Physics, McGill University, Montreal, Québec H3A 2T8, Canada.

Physical Review Letters
|October 22, 2016
PubMed
Summary
This summary is machine-generated.

This study introduces an atomistic model for electromigration (EM) in metals using phase-field-crystal (PFC) methods. The model captures key EM phenomena and void dynamics at atomic resolution on relevant timescales.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Computational Materials Science

Background:

  • Electromigration (EM) is a critical failure mechanism in metallic interconnects.
  • Existing atomistic models often lack the necessary time and length scales to simulate circuit failure.
  • Understanding EM at the atomic level is crucial for reliable microelectronic devices.

Purpose of the Study:

  • To develop a novel atomistic model for electromigration in metals.
  • To capture fundamental EM phenomena and void dynamics using a phase-field-crystal (PFC) approach.
  • To enable simulations of EM-induced circuit failure at atomic resolution and experimentally relevant timescales.

Main Methods:

  • Utilizing a phase-field-crystal (PFC) technique to model atomic density.
  • Coupling the PFC model with an applied electric field via the effective charge parameter.
  • Simulating electromigration phenomena on diffusive timescales.

Main Results:

  • Successfully reproduced established EM phenomena, including Black's equation and the Blech effect.
  • Naturally captured void nucleation and migration in bulk crystals.
  • Identified a resistivity dipole field from void surfaces as a significant contributor to void migration velocity.

Conclusions:

  • The proposed PFC-based atomistic model provides a powerful framework for studying electromigration.
  • The model's ability to simulate at atomic resolution and relevant timescales facilitates investigation of EM-induced circuit failure.
  • This approach advances the understanding of fundamental mechanisms driving electromigration in metals.