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A single-source precursor approach to solution processed indium arsenide thin films.

Peter Marchand1, Sanjayan Sathasivam2, Benjamin A D Williamson3

  • 1Materials Chemistry Centre , Department of Chemistry , University College London , 20 Gordon Street , London WC1H 0AJ , UK .

Journal of Materials Chemistry. C
|October 25, 2016
PubMed
Summary
This summary is machine-generated.

Researchers developed a new single-source precursor for growing indium arsenide (InAs) thin films using aerosol-assisted chemical vapor deposition. This method yields high-quality InAs films at low temperatures, showing potential for electronic applications.

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Area of Science:

  • Materials Science
  • Inorganic Chemistry
  • Nanotechnology

Background:

  • Indium arsenide (InAs) is a crucial semiconductor material with applications in high-speed electronics and optoelectronics.
  • Developing efficient and low-temperature synthesis methods for InAs thin films is essential for advanced device fabrication.

Purpose of the Study:

  • To synthesize a novel single-source precursor for InAs.
  • To report the first instance of aerosol-assisted chemical vapor deposition (AACVD) for InAs thin films using this precursor.
  • To characterize the structural, chemical, and electrical properties of the deposited InAs films.

Main Methods:

  • Synthesis of the single-source precursor [{(MeInAsBu)3}2(Me2InAs(Bu)H)2].
  • Aerosol-assisted chemical vapor deposition (AACVD) at 450 °C.
  • X-ray photoelectron spectroscopy (XPS) for surface and depth profiling.
  • Valence band XPS analysis.
  • Hall effect measurements.

Main Results:

  • Highly crystalline and stoichiometric InAs thin films were successfully grown at a low temperature of 450 °C.
  • XPS studies indicated self-limiting partial oxidation on the film surface, which diminished upon etching.
  • Valence band XPS data correlated well with simulated density of states.
  • Hall measurements revealed n-type InAs films with promising resistivity (3.6 × 10^-3 Ω cm) and carrier mobility (410 cm^2 V^-1 s^-1) on amorphous glass.

Conclusions:

  • The novel single-source precursor enables efficient low-temperature AACVD of high-quality InAs thin films.
  • The synthesized InAs films exhibit favorable electrical properties suitable for potential electronic device applications.
  • This approach offers a viable route for scalable and cost-effective production of InAs thin films.