Quantification of the Void Volume in Single-Crystal Silicon
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Updated: Mar 13, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
Giancarlo D'Agostino1, Marco Di Luzio1,2, Giovanni Mana1
1Istituto Nazionale di Ricerca Metrologica , Strada delle Cacce 91, 10135 Torino, Italy.
Abstract:
This paper investigates the use of a method based on Cu decoration and neutron activation to determine the total volume of voids in a silicon single crystal. A measurement protocol was developed and tested in an experiment carried out with a 5 cm3 volume and 10 g mass high-purity natural silicon sample. The few percent uncertainty reached in the determination of the Cu concentration, at a 1014 cm-3 level, makes this method a candidate to set an upper limit to the concentration of the vacancies contributing to the void volume in the enriched silicon material used to determine the Avogadro constant.
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