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Updated: Mar 12, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Photon-Gated Spin Transistor
Fan Li1, Cheng Song1, Bin Cui1
1Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Abstract:
A new type of spin transistor with an optical gate is proposed with partial exposure of the device, where spin scattering is enhanced under light illumination due to the photon-induced minor spins. Consequently a reproducible transient gate operation of reisitance via optical methods is observed, as ascribed to the nature of spin excitation.
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