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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Diode: Reverse bias01:14

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A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
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P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Biasing of P-N Junction01:16

Biasing of P-N Junction

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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Characteristics of MOSFET01:17

Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors
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709

Minority Currents in n-Doped Organic Transistors.

Akram Al-Shadeedi1,2, Shiyi Liu1,2, Chang-Min Keum1,2

  • 1Department of Physics and ∥Department of Chemistry and Biochemistry, Kent State University , Kent, Ohio 44242, United States.

ACS Applied Materials & Interfaces
|November 1, 2016
PubMed
Summary
This summary is machine-generated.

Minority charge carriers are injected into n-doped organic field-effect transistors via Zener tunneling. Light n-doping shifts hole conduction onset due to increased voltage and trapping.

Keywords:
Zener tunnelingambipolar transistorminority currentsn-channel transistorn-type molecular dopingpentacene field-effect transistor

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Area of Science:

  • Organic electronics
  • Semiconductor physics

Background:

  • Doping controls charge carrier concentration in organic field-effect transistors (OFETs).
  • Mechanisms of minority charge carrier generation and transport in organic semiconductors remain unclear.

Purpose of the Study:

  • Investigate minority charge carrier injection in n-doped OFETs.
  • Elucidate the role of Zener tunneling in hole injection.
  • Analyze the effect of n-doping on minority carrier conduction onset.

Main Methods:

  • Experimental study of minority charge carrier injection.
  • Analysis of Zener tunneling in pentacene layers.
  • Characterization of n-doped OFETs.

Main Results:

  • Efficient hole injection into the OFET channel via Zener tunneling was demonstrated.
  • Zener tunneling occurs in the intrinsic pentacene layer beneath the drain electrode.
  • Light n-doping of the channel shifts the onset of minority (hole) conduction.

Conclusions:

  • Zener tunneling is a key mechanism for minority carrier injection in n-doped OFETs.
  • The observed shift in conduction onset is attributed to gate voltage requirements for depletion and increased hole trapping by inactive dopants.