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Passivated Single-Crystalline CH3NH3PbI3 Nanowire Photodetector with High Detectivity and Polarization Sensitivity
Liang Gao1, Kai Zeng1, Jingshu Guo1
1Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.
Abstract:
Photodetectors convert light signals into current or voltage outputs and are widely used for imaging, sensing, and spectroscopy. Perovskite-based photodetectors have shown high sensitivity and fast response due to the unprecedented low recombination loss in this solution processed semiconductor. Among various types of CH3NH3PbI3 morphology (film, single crystal, nanowire), single-crystalline CH3NH3PbI3 nanowires are particularly interesting for photodetection because of their reduced grain boundary, morphological anisotropy, and excellent mechanical flexibility. The concomitant disadvantage associated with the CH3NH3PbI3 nanowire photodetectors is their large surface area, which catalyzes carrier recombination and material decomposition, thus significantly degrading device performance and stability. Here we solved this key problem by introducing oleic acid soaking to passivate surface defects of CH3NH3PbI3 nanowires, which leads to a device with much improved stability and unprecedented sensitivity (measured detectivity of 2 × 1013 Jones). By taking advantage of their one-dimensional geometry, we also showcased, for the first time, the linear dichroic photodetection of our CH3NH3PbI3 nanowire photodetector.

