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Updated: Mar 12, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Accurate electron affinity of V and fine-structure splittings of V- via slow-electron velocity-map imaging
Xiaoxi Fu1, Zhihong Luo1, Xiaolin Chen1
1Department of Physics, State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 10084, China.
Abstract:
We report the high-resolution photoelectron spectra of negative vanadium ions obtained via the slow-electron velocity-map imaging method. The electron affinity of V was determined to be 4255.9(18) cm-1 or 0.527 66(20) eV. The accuracy was improved by a factor of 60 with regard to the previous measurement. The fine structure of V- was well resolved: 35.9(11) (5D1), 103.8(12) (5D2), 204.17(74) (5D3), and 330.58(40) cm-1 (5D4) above the ground state 5D0, respectively.
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