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An Atmospheric Pressure Plasma Setup to Investigate the Reactive Species Formation
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Development of array-type atmospheric-pressure RF plasma generator with electric on-off control for high-throughput

H Takei1, S Kurio1, S Matsuyama1

  • 1Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.

The Review of Scientific Instruments
|November 3, 2016
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Summary

This study introduces an array-type atmospheric-pressure radio-frequency plasma generator for precise numerically controlled (NC) processes. It enables individual plasma on-off control for each electrode, achieving sub-nanometer uniformity in silicon-on-insulator wafer processing.

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Area of Science:

  • Materials Science
  • Plasma Physics
  • Electrical Engineering

Background:

  • High-precision and high-throughput numerically controlled (NC) processes require advanced plasma generation technologies.
  • Existing atmospheric-pressure radio-frequency (RF) plasma generators face challenges in individual electrode control and precision.

Purpose of the Study:

  • To propose and validate an array-type atmospheric-pressure RF plasma generator for enhanced NC processes.
  • To demonstrate individual plasma on-off control for each electrode in the array.
  • To achieve high-precision surface layer processing, specifically for silicon-on-insulator (SOI) wafers.

Main Methods:

  • Development of an array-type atmospheric-pressure RF plasma generator with 19 individually controlled electrodes.
  • Integration of metal-oxide-semiconductor field-effect transistor (MOSFET) circuits for direct RF switching and plasma on-off control.
  • Examination of electrode spacing design to manage parasitic capacitance for independent electrode control.
  • Application of the NC sacrificial oxidation method for surface layer processing.

Main Results:

  • Successful confirmation of individual plasma on-off control for each of the 19 electrodes.
  • Verification of MOSFET circuit functionality with low parasitic capacitance for precise switching.
  • Demonstration of achieving less than 1 nm peak-to-valley thickness uniformity for the surface Si layer of SOI wafers.

Conclusions:

  • The proposed array-type atmospheric-pressure RF plasma generator with MOSFET switching enables high-precision, individually controlled plasma processing.
  • This technology is suitable for advanced NC processes, particularly for achieving ultra-uniform surface layers on SOI wafers.
  • The design methodology for electrode spacing is crucial for effective individual electrode control in array-type plasma generators.