Development of array-type atmospheric-pressure RF plasma generator with electric on-off control for high-throughput...

Area of Science:

• Materials Science
• Plasma Physics
• Electrical Engineering

Background:

• High-precision and high-throughput numerically controlled (NC) processes require advanced plasma generation technologies.
• Existing atmospheric-pressure radio-frequency (RF) plasma generators face challenges in individual electrode control and precision.

Purpose of the Study:

• To propose and validate an array-type atmospheric-pressure RF plasma generator for enhanced NC processes.
• To demonstrate individual plasma on-off control for each electrode in the array.
• To achieve high-precision surface layer processing, specifically for silicon-on-insulator (SOI) wafers.

Main Methods:

• Development of an array-type atmospheric-pressure RF plasma generator with 19 individually controlled electrodes.
• Integration of metal-oxide-semiconductor field-effect transistor (MOSFET) circuits for direct RF switching and plasma on-off control.
• Examination of electrode spacing design to manage parasitic capacitance for independent electrode control.
• Application of the NC sacrificial oxidation method for surface layer processing.

Main Results:

• Successful confirmation of individual plasma on-off control for each of the 19 electrodes.
• Verification of MOSFET circuit functionality with low parasitic capacitance for precise switching.
• Demonstration of achieving less than 1 nm peak-to-valley thickness uniformity for the surface Si layer of SOI wafers.

Conclusions:

• The proposed array-type atmospheric-pressure RF plasma generator with MOSFET switching enables high-precision, individually controlled plasma processing.
• This technology is suitable for advanced NC processes, particularly for achieving ultra-uniform surface layers on SOI wafers.
• The design methodology for electrode spacing is crucial for effective individual electrode control in array-type plasma generators.