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Updated: Mar 12, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Microscale Fracture Behavior of Single Crystal Silicon Beams at Elevated Temperatures
Balila Nagamani Jaya1, Jeffrey M Wheeler2, Juri Wehrs3
1Structure and Nano-/Micromechanics of Materials, Max Planck Institut für Eisenforschung GmbH , Max Planck Strasse-1, 40237 Düsseldorf, Germany.
Abstract:
The micromechanical fracture behavior of Si [100] was investigated as a function of temperature in the scanning electron microscope with a nanoindenter. A gradual increase in KC was observed with temperature, in contrast to sharp transitions reported earlier for macro-Si. A transition in cracking mechanism via crack branching occurs at ∼300 °C accompanied by multiple load drops. This reveals that onset of small-scale plasticity plays an important role in the brittle-to-ductile transition of miniaturized Si.

