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Updated: Mar 12, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Controllable anisotropic wetting characteristics on silicon patterned by slit-based spatial focusing of femtosecond
Abstract:
We propose a promising method to fabricate controllable anisotropic morphologies in which the slit-based spatial focusing of femtosecond laser is used to create an elliptical-shaped intensity distribution at focal plane, inducing elliptical-shaped morphology with micro/nano-dual-scale structures. Our study shows that 1) by increasing slit width, minor axis increases while major axis and axial ratio decrease; 2) with fixed slit width and laser fluence above the threshold, axial ratio is independent of irradiation pulse number; and 3) when polarization direction is changed from 0° to 90°, the axial ratio of anisotropic morphology declines. As a case study, large-area periodic anisotropic hierarchical structures are fabricated with the bidirectional anisotropic wetting.

