Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

Area of Science:

• Materials Science
• Computer Engineering
• Number Theory

Background:

• Redox-based resistive switching random access memory (ReRAM) is a promising technology for non-volatile memory.
• Two-state ReRAMs have shown potential for implementing Boolean logic functions.
• Multistate memory devices offer enhanced data storage capabilities.

Purpose of the Study:

• To demonstrate the realization of intrinsic modular arithmetic using multistate Tantalum Oxide Devices.
• To explore the application of ternary number systems in memory devices.
• To investigate novel in-memory computing operations enabled by high-radix number systems.

Main Methods:

• Fabrication and characterization of seven-state Tantalum Oxide (TaOx) devices.
• Implementation of modular arithmetic operations within the memory devices.
• Evaluation of computational efficiency using high-radix number systems.

Main Results:

• Successfully demonstrated seven-state resistive switching in TaOx devices.
• Realized intrinsic modular arithmetic operations using a ternary number system.
• Showcased significant reduction in storage area and computational complexity compared to two-state devices.

Conclusions:

• Multistate ReRAM devices, specifically seven-state TaOx, can perform intrinsic modular arithmetic.
• The use of high-radix number systems in memory devices reduces computational complexity and hardware requirements.
• This technology opens new avenues for efficient in-memory computing and data storage.