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Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron

Yadira Arroyo Rojas Dasilva1, Roksolana Kozak1, Rolf Erni1

  • 1Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.

Ultramicroscopy
|November 14, 2016
PubMed

Keywords:
Cubic semiconductorsDislocationsScanning transmission electron microscopyStructural defectsTwinningZincblende structure

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