Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Carrier Generation and Recombination

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Deep optoelectronic reservoir computing using electrically cascaded semiconductor lasers.

Optics express·2026

Same author

Dual-layer spectral-detector CT-derived quantifications for preoperative identification of perineural invasion in gastric cancer.

European journal of radiology·2026

Same author

CT-based radiomics for predicting the treatment response to PD-1/PD-L1 inhibitors combined with chemotherapy in unresectable gastric cancer.

Insights into imaging·2026

Same author

Deep time-delay reservoir computing based on a single photonic nonlinear node.

Optics letters·2025

Same author

Thoracic duct obstruction leading to chylous mesenteric cyst in an female obese adolescent: a case report.

Annals of medicine and surgery (2012)·2025

Same author

Single photonic reservoir dual-task simultaneous computing based on a semiconductor ring laser with filtered optical feedback.

Optics express·2025

Search research articles

Related Experiment Video

Updated: Mar 12, 2026

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Published on: February 28, 2016

Randomness evaluation for an optically injected chaotic semiconductor laser by attractor reconstruction.

Xiao-Zhou Li¹, Jun-Ping Zhuang¹, Song-Sui Li¹

¹Department of Electronic Engineering, City University of Hong Kong, Hong Kong, China.

Physical Review. E

|November 15, 2016

Summary

This study uses state-space reconstruction to evaluate randomness in optically injected semiconductor lasers. The method quantifies chaos using time-dependent exponents (TDEs) and entropies, confirming high-speed random bit generation.

More Related Videos

Quantum State Engineering of Light with Continuous-wave Optical Parametric Oscillators

Quantum State Engineering of Light with Continuous-wave Optical Parametric Oscillators

Published on: May 30, 2014

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Related Experiment Videos

Last Updated: Mar 12, 2026

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Published on: February 28, 2016

Quantum State Engineering of Light with Continuous-wave Optical Parametric Oscillators

Quantum State Engineering of Light with Continuous-wave Optical Parametric Oscillators

Published on: May 30, 2014

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Area of Science:

Physics
Nonlinear Dynamics
Optical Engineering

Background:

Optically injected semiconductor lasers exhibit complex chaotic dynamics.
Evaluating the randomness of chaotic systems is crucial for secure communication and random number generation.
State-space reconstruction offers a method to analyze chaotic attractors from time series data.

Purpose of the Study:

To investigate state-space reconstruction for evaluating randomness in optically injected semiconductor lasers.
To quantify the chaotic behavior using time-dependent exponents (TDEs) and entropies.
To establish a basis for high-speed random bit generation from laser chaos.

Main Methods:

State-space reconstruction using only the emission intensity time series.
Quantification of randomness via divergence of neighboring states using TDEs.
Estimation of Shannon entropies for assessing random bit generation potential.

Main Results:

Good qualitative agreement between experimental and numerical evaluations.
Positive mean TDE indicating chaotic mixing and noise amplification.
Demonstrated high-speed random bit generation with a combined output bit rate of 200 Gb/s.

Conclusions:

State-space reconstruction provides direct experimental verification of randomness in chaotic lasers.
TDEs and entropies are effective measures for characterizing laser chaos and randomness.
The study validates the potential of optically injected lasers for practical random bit generation.