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Updated: Jan 2, 2026
Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
Graphene/nitrogen-functionalized graphene quantum dot hybrid broadband photodetectors with a buffer layer of boron
Hiroyuki Tetsuka1, Akihiro Nagoya1, Shin-Ichi Tamura1
1Frontier Research-Domain, Toyota Central R&D Labs, Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan. h-tetsuka@mosk.tytlabs.co.jp.
Abstract:
A high performance hybrid broadband photodetector with graphene/nitrogen-functionalized graphene quantum dots (NGQDs@GFET) is developed using boron nitride nanosheets (BN-NSs) as a buffer layer to facilitate the separation and transport of photoexcited carriers from the NGQD absorber. The NGQDs@GFET photodetector with the buffer layer of BN-NSs exhibits enhanced photoresponsivity and detectivity in the deep ultraviolet region of ca. 2.3 × 106 A W-1 and ca. 5.5 × 1013 Jones without the application of a backgate voltage. The high level of photoresponsivity persists into the near-infrared region (ca. 3.4 × 102 A W-1 and 8.0 × 109 Jones). In addition, application in flexible photodetectors is demonstrated by the construction of a structure on a polyethylene terephthalate (PET) substrate. We further show the feasibility of using our flexible photodetectors towards the practical application of infrared photoreflectors. Together with the potential application of flexible photodetectors and infrared photoreflectors, the proposed hybrid photodetectors have potential for use in future graphene-based optoelectronic devices.
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