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Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing

Tessy Theres Baby1, Manuel Rommel1, Falk von Seggern1,2

  • 1Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.

Advanced Materials (Deerfield Beach, Fla.)
|November 19, 2016
PubMed

Keywords:
composite solid polymer electrolytescurrent densityink-jet printingporous semiconductorsvertical field-effect transistors

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...