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Black Phosphorus N-Type Field-Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping

Amit Prakash1, Yongqing Cai2, Gang Zhang2

  • 1Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.

Small (Weinheim an Der Bergstrasse, Germany)
|November 19, 2016
PubMed

Keywords:
aluminum adatomsblack phosphorusdopingmobilityphosphorene

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