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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Conductance Oscillations in a Graphene/Nanocluster Hybrid Material: Toward Large-Area Single-Electron Devices
Florian Godel1, Louis Donald Notemgnou Mouafo1, Guillaume Froehlicher1
1Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, BP 43, F-67034, Strasbourg Cedex 2, France.
Abstract:
Large assemblies of self-organized aluminum nanoclusters embedded in an oxide layer are formed on graphene templates and used to build tunnel-junction devices. Unexpectedly, single-electron-transport behavior with well-defined Coulomb oscillations is observed for a record junction area of up to 100 µm2 containing millions of metal islands. Such graphene-metal nanocluster hybrid materials offer new prospects for single-electron electronics.
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