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Metal-Semiconductor Phase-Transition in WSe2(1-x) Te2x Monolayer
Peng Yu1, Junhao Lin2, Linfeng Sun3
1School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
Abstract:
A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1-x) Te2x , where x = 0%-100%). The optical bandgaps of the WSe2(1-x) Te2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.
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