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Updated: Mar 11, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches
Mohammed Soltani1, Mohamed Chaker1, Joelle Margot2
1INRS-Énergie, Matériaux et Télécommunications, 1650 Lionel Boulet, Varennes, QC, J3X 1S2, Canada.
Abstract:
Negative capacitance (NC) in a planar W-doped VO2 micro-switch was observed at room temperature in the low-frequency range 1 kHz-10 MHz. The capacitance changed from positive to negative values as the W-doped VO2 active layer switched from semiconducting to metallic state under applied voltage. In addition, a capacitance-voltage hysteresis was observed as the applied voltage was cycled from -35 to 35 V. These observations suggest that NC results from the increase of the electrically induced conductivity in the active layer. This NC phenomenon could be exploited in advanced multifunctional devices including ultrafast switches, field-effect transistors and memcapacitive systems.
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