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Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes

Yun-Hi Lee1, Sungim Park1

  • 1National Research Laboratory for Nano Device Physics, Department of Physics, Korea University, Seoul 136-713, Korea.

Science and Technology of Advanced Materials
|November 24, 2016
PubMed

Keywords:
LPCVDSi nanowireslow-pressure chemical vapor depositionnanowire junction

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