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Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy.
1Department of Materials Science, Graduate School of Engineering, Tohoku University, Aramaki Aza Aoba 6-6-11-1020, Sendai, 980-8579, Japan.
Science and Technology of Advanced Materials
|November 24, 2016
Summary
Researchers developed novel sidewall gallium arsenide (GaAs) tunnel junctions using molecular layer epitaxy (MLE). These junctions achieved a record peak current density, paving the way for advanced terahertz devices.
Area of Science:
- Semiconductor device physics
- Materials science
Background:
- Gallium arsenide (GaAs) tunnel junctions are crucial for advanced electronic devices.
- Developing high-performance tunnel junctions requires precise material growth and fabrication techniques.
Approach:
- Utilized molecular layer epitaxy (MLE) for heavily impurity-doped GaAs epitaxial layers.
- Fabricated sidewall tunnel junctions via wet etching and low-temperature area-selective regrowth.
- Investigated fundamental properties and potential applications of the fabricated junctions.
Key Points:
- Achieved record peak current density of 35,000 A cm⁻² in sidewall GaAs tunnel junctions.
- Demonstrated the feasibility of using MLE for precise doping and layer control.
- Sidewall orientation and fabrication method are critical for high performance.
Conclusions:
- The developed sidewall GaAs tunnel junctions exhibit exceptional current densities.
- These junctions hold significant potential for terahertz (THz) applications.
- Future applications include tunnel injection transit time diodes and static induction transistors.
