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Versatile sputtering technology for Al2O3 gate insulators on graphene.

Miriam Friedemann1, Mirosław Woszczyna1, André Müller1

  • 1Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116, Braunschweig, Germany.

Science and Technology of Advanced Materials
|November 24, 2016
PubMed
Summary
This summary is machine-generated.

We developed a new sputtering method to create aluminum oxide (Al2O3) gate insulators for graphene devices. This technique offers comparable quality to atomic layer deposition, enabling high-performance graphene electronics.

Keywords:
Atomic layer depositionGrapheneHigh-κ dielectricSputtering

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene's unique electronic properties make it a promising material for next-generation electronics.
  • High-quality gate dielectrics are crucial for controlling graphene's electrical characteristics.
  • Existing fabrication methods like atomic layer deposition can be complex and costly.

Purpose of the Study:

  • To introduce a novel sputtering-based fabrication method for aluminum oxide (Al2O3) gate insulators on graphene.
  • To evaluate the electrical performance of graphene devices utilizing these sputtered Al2O3 layers.
  • To compare the quality of sputtered Al2O3 with conventionally used oxides.

Main Methods:

  • Fabrication of Al2O3 gate insulators on graphene using a sputtering technique.
  • Electrical characterization of dual-gated monolayer and bilayer exfoliated graphene devices.
  • Analysis of dielectric properties, including relative dielectric constant, hysteresis, and breakdown voltage.

Main Results:

  • Sputtered Al2O3 layers exhibit a high relative dielectric constant (~8), low hysteresis, and high breakdown voltage, comparable to atomic layer deposition.
  • Moderate carrier mobilities were observed: ~1000 cm^2 V^-1 s^-1 for monolayer graphene and ~350 cm^2 V^-1 s^-1 for bilayer graphene.
  • A decrease in mobility in bilayer graphene is attributed to resonant scattering from atomic-scale defects, likely from the precursor layer.

Conclusions:

  • Sputtering offers a viable and effective method for fabricating high-quality Al2O3 gate insulators for graphene.
  • The developed method demonstrates potential for scalable and cost-effective production of graphene-based electronic devices.
  • Further research into defect mitigation in the precursor layer could enhance graphene device performance.