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Updated: Mar 11, 2026
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Published on: January 6, 2016
Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation
Cui Xia Yan1, Ying Dai2, Meng Guo2
1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China; Department of Physics, Jining University, Qufu 273155, People's Republic of China.
Abstract:
We have implanted boron (B) ions (dosage: 5×1014 cm-2) into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resistivity of 7.37 mΩ cm has been obtained in our experiment, which suggests that the hydrogenation of B-doped diamond results in a low-resistivity p-type material. Interestingly, inverse annealing, in which carrier concentration decreased with increasing annealing temperature, was observed at annealing temperatures above 600 °C. In addition, the formation mechanism of a low-resistivity material has been studied by density functional theory calculation using a plane wave method.
