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MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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Updated: Mar 11, 2026

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions
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CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials.

Sung Pil Lee1, Ji Gong Lee2, Shaestagir Chowdhury3

  • 1Department of Electronic Engineering, Kyungnam University, Masan, Kyungnam 631-701, Korea. sensors@kyungnam.ac.kr.

Sensors (Basel, Switzerland)
|November 24, 2016
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Summary

This study presents an integrated humidity sensor system using nano-structured carbon nitride film. The novel system, fabricated with CMOS technology, demonstrates high sensitivity for humidity detection.

Keywords:
CMOSCarbon nitride filmHumidityIntegrated sensors

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Sensor Technology

Background:

  • Integrated sensor systems are crucial for environmental monitoring.
  • Developing sensitive and reliable humidity sensing materials is an ongoing challenge.
  • Carbon nitride (CNx) nanomaterials show promise for sensing applications.

Purpose of the Study:

  • To fabricate an integrated humidity sensor system using nano-structured carbon nitride (CNx) film.
  • To evaluate the performance of the CNx-based humidity sensor.
  • To integrate the humidity sensor with other components on a single chip.

Main Methods:

  • Fabrication of the sensor system using a 0.8 μm analog mixed CMOS process.
  • Deposition of CNx film via reactive RF magnetron sputtering.
  • Patterning of CNx film using the lift-off technique.
  • Integration of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier.

Main Results:

  • The integrated sensor system was successfully fabricated.
  • The drain current was found to be proportional to the dielectric constant of the sensing material.
  • A sensitivity of 2.8 μA/%RH was achieved for the humidity sensor.

Conclusions:

  • Nano-structured carbon nitride film is a viable material for humidity sensing.
  • The integrated CMOS sensor system offers a promising platform for humidity detection.
  • The developed sensor exhibits good sensitivity for environmental monitoring applications.