The Image Transceiver Device: Studies of Improved Physical Design

Area of Science:

• Optoelectronics
• Semiconductor device physics
• Image sensor technology

Background:

• Image Transceiver Devices (ITD) integrate LCOS micro-displays, image processing, and back-illuminated APS imagers on a single CMOS chip.
• Current ITD designs face challenges with high crosstalk and inadequate shielding of pixel circuitry from photocharges.

Purpose of the Study:

• To present a modified "deep p-well" ITD pixel design.
• To address crosstalk and photo-charge shielding issues in back-illuminated imagers.
• To enhance performance for Head-Mounted Display applications in augmented and virtual reality.

Main Methods:

• Developed a modified "deep p-well" pixel structure for the ITD.
• Utilized Silvaco software (ATLAS) for device simulation, including ray tracing and light absorption analysis.
• Simulated photo response, crosstalk reduction, and charge shielding effectiveness.

Main Results:

• The "deep p-well" design significantly reduces crosstalk levels.
• Achieved effective shielding of pixel circuitry from photocharges.
• Simulations indicate high photo response and enable increased die thickness, improving mechanical ruggedness and long-wavelength photon absorption.

Conclusions:

• The proposed "deep p-well" pixel structure offers a viable solution for high-performance back-illuminated CMOS image sensors.
• This design enhances the suitability of ITDs for augmented and virtual reality Head-Mounted Displays.
• The technology improves device durability and optical performance, particularly for longer wavelengths.