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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
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Tunable doping of graphene by using physisorbed self-assembled networks
Roald Phillipson1, César J Lockhart de la Rosa2, Joan Teyssandier1
1KU Leuven-University of Leuven, Department of Chemistry, Division of Molecular Imaging and Photonics, Celestijnenlaan 200F, B-3001 Leuven, Belgium. steven.defeyter@kuleuven.be.
Nanoscale
|November 25, 2016
Summary
Researchers tuned graphene
Area of Science:
- Materials Science
- Nanotechnology
- Surface Chemistry
Background:
- Tuning charge carrier concentration (p- and n-type doping) is crucial for graphene applications.
- Physisorbed self-assembled networks offer a route for controlled graphene doping.
Purpose of the Study:
- To achieve tunable n-type doping of graphene.
- To investigate the role of alkyl-amine chain length in modulating doping levels.
Main Methods:
- Fabrication of self-assembled networks of alkyl-amines on graphene.
- Characterization using scanning tunneling microscopy (STM) and atomic force microscopy (AFM).
- Evaluation of doping levels via Raman spectroscopy and graphene field-effect device measurements.
Main Results:
- Successfully demonstrated tunable n-type doping of graphene.
- Alkyl-amine chain length controls the density of doping sites on the graphene surface.
- Doping magnitude correlates with alkyl chain length, acting as a spacer.
Conclusions:
- Supramolecular functionalization with alkyl-amines provides effective control over graphene's electronic properties.
- This method enables nanoscale control for advanced graphene-based devices.
- Offers a versatile approach for tuning other two-dimensional materials.

