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Updated: Mar 11, 2026

Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization
Published on: July 12, 2016
Bulk molybdenum field emitters by inductively coupled plasma etching
Ningli Zhu1, Matthew T Cole2, William I Milne3
1Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China. j.chen@pku.edu.cn and Electrical Engineering Division, Department of Engineering, University of Cambridge, UK.
Abstract:
In this work we report on the fabrication of inductively coupled plasma (ICP) etched, diode-type, bulk molybdenum field emitter arrays. Emitter etching conditions as a function of etch mask geometry and process conditions were systematically investigated. For optimized uniformity, aspect ratios of >10 were achieved, with 25.5 nm-radius tips realised for masks consisting of aperture arrays some 4.45 μm in diameter and whose field electron emission performance has been herein assessed.

