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Area of Science:

  • Condensed Matter Physics
  • Quantum Materials

Background:

  • Anderson localization typically arises from potential scattering by random impurities.
  • Disorder effects on quantum phase transitions are crucial for understanding material properties.

Purpose of the Study:

  • To investigate if random gauge fields, distinct from impurity scattering, can induce Anderson localization.
  • To explore the superfluid Bose glass to insulator transition driven by gauge field disorder.

Main Methods:

  • Fabrication of nano-patterned amorphous Bismuth (Bi) islands.
  • Experimental measurement of transport properties across a range of gauge field disorder.
  • Comparison of experimental findings with Quantum Monte Carlo simulations.

Main Results:

  • Evidence of a superfluid Bose glass to insulator transition induced by gauge field disorder.
  • Observation of metallic transport near the quantum critical point, indicated by resistance.
  • Critical disorder level dependence on interisland coupling, consistent with theoretical predictions.

Conclusions:

  • Random gauge fields are a viable mechanism for driving Anderson localization and quantum phase transitions.
  • This disorder-tuned superconductor-insulator transition (SIT) offers a new platform for studying quantum criticality.
  • Enables high-fidelity comparisons between theory and experiment in disordered quantum systems.