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    We developed novel ring modulators using standing waves for enhanced efficiency and speed. This approach significantly improves modulation performance compared to traditional traveling-wave designs.

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    Area of Science:

    • Photonics and optoelectronics
    • Integrated optics
    • Semiconductor device physics

    Background:

    • Traditional ring modulators often face limitations in modulation efficiency, insertion loss, and speed.
    • Traveling-wave resonant modes in existing designs can be suboptimal for performance enhancement.

    Purpose of the Study:

    • To propose and investigate novel ring modulators utilizing interdigitated p-n junctions and standing-wave resonant modes.
    • To enhance modulation efficiency, reduce insertion loss, and increase operational speed in optical modulators.
    • To explore device architectures compatible with advanced CMOS fabrication processes.

    Main Methods:

    • Utilizing interdigitated p-n junctions to exploit standing-wave resonant modes.
    • Applying temporal coupled mode theory to model static and dynamic responses.
    • Analyzing device architectures for optimized carrier density and capacitance.

    Main Results:

    • Achieved modulation efficiencies and loss Q factors up to 2 times higher than traveling-wave geometries.
    • Demonstrated significant improvements in sensitivity by matching resonant mode features with carrier density regions.
    • Identified relaxed optical constraints on contact placement and potential for lower device capacitance.

    Conclusions:

    • Standing-wave resonant modes in interdigitated p-n junction ring modulators offer superior performance.
    • The proposed approach is compatible with advanced CMOS processes, enabling efficient and high-speed optical modulation.
    • Further optimization through complex doping geometries can enhance carrier dynamics for even higher modulation speeds.