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Solution-based electrical doping of semiconducting polymer films over a limited depth
Vladimir A Kolesov1, Canek Fuentes-Hernandez1, Wen-Fang Chou1
1Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
Nature Materials
|December 6, 2016
Summary
This study introduces a new solution-based doping method using phosphomolybdic acid (PMA) for organic semiconductors. This technique enhances conductivity and stability, enabling efficient organic photovoltaic devices.
Area of Science:
- Materials Science
- Organic Electronics
- Electrochemistry
Background:
- Solution-based doping offers versatility in organic electronics but faces challenges in dopant control and stability.
- Controlling dopant diffusion depth and improving material stability are crucial for device performance.
Purpose of the Study:
- To develop a solution-based electrical doping protocol for organic semiconductors with controlled depth and improved stability.
- To investigate the impact of phosphomolybdic acid (PMA) doping on the properties of organic semiconductors and their application in devices.
Main Methods:
- Post-process immersion of organic semiconductor films into a phosphomolybdic acid (PMA) solution in nitromethane.
- Characterization of doped films for electrical conductivity, work function, solubility, and stability.
- Fabrication and testing of single-layer organic photovoltaic devices using PMA-doped bulk heterojunction films.
Main Results:
- PMA doping achieved p-doping over a limited depth (10-20 nm decay constant) in organic semiconductor films.
- Doped films exhibited increased electrical conductivity and work function, reduced solubility, and enhanced photo-oxidative stability.
- Single-layer organic photovoltaic devices achieved power conversion efficiencies of 5.9 ± 0.2% with stable performance.
Conclusions:
- The developed PMA doping method provides a versatile and effective approach for enhancing organic semiconductor properties.
- This technique enables the fabrication of high-performance, stable, single-layer organic photovoltaic devices processed at room temperature.
- The limited-depth doping strategy is applicable to various organic semiconductors for photovoltaics and field-effect transistors.
